any changing of specification will not be informed individual SS8550W pnp silicon general purpose transistor power dissipation p cm : 0.2 w collector current i cm : -1.5 a collector-base voltage features collector 3 1 base 2 emitter k j c h l a b s g v 3 1 2 d top view http://www.secosgmbh.com elektronische bauelemente parameter symbol test conditions min typ max unit collector- base breakdown voltage v (br)cbo ic= 100 0 a i e =0 -40 v collector-emi tter breakdown voltage v (br)ceo ic=-0.1ma i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e =-100 0 a i c =0 -5 v collector cut- off current i cbo v cb =-40 v , i e =0 -0.1 0 a collector cut- off current i ceo v ce =-20v , i b =0 -0.1 0 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 0 a h fe(1) v ce =-1v, i c =-100m a 120 350 dc current gain h fe(2) v ce =-1v, i c =-800ma 40 collector- emitter saturation voltage v ce (sat) i c =-800 ma, i b = -80m a -0.5 v base- emitter saturation voltage v be (sat) i c =-800 ma, i b = -80m a -1.2 v transition frequency f t v ce =-10v, i c =-50ma f= 30mhz 100 mhz classification of h fe(1) rank l h range 120-200 200-350 1 2 electrical characteristics ( tamp.=25 o c unless otherwise specified) v (br)cbo : - 40 v operating & storage junction temperature t j , t stg : - 55 o c ~ + 150 o c 3 marking : y2 output capacitance & r e (v cb =-10v,i e =0,f=1mhz) 20 s ) 01-jun-2002 rev. a page 1 of 2 dim min max a 1.800 2.200 b 1.150 1.350 c 0.800 1.000 d 0.300 0.400 g 1.200 1.400 h 0.000 0.100 j 0.100 0.250 k 0.350 0.500 l 0.590 0.720 s 2.000 2.400 v 0.280 0.420 all dimension in mm sot-323 r o h s c o m p l i a n t p r o d u c t
any changing of specification will not be informed individual http://www.secosgmbh.com elektronische bauelemente ical haracteristics iure tatic haracteristic iure current ain iure baseemitter aturation oltae ollectoremitter aturation oltae iure baseemitter n oltae iure ollector utut aacitance iure urrent ain banith rouct b m b m b m b m b m b m b m b m m e e e eee e e h e e m e e esat besat b be sat e sat e m e e e m e e be beee e e o e b ebe e e e b m e e SS8550W pnp silicon general purpose transistor 01-jun-2002 rev. a page 2 of 2
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